Analysis of the oxidation kinetics and barrier layer properties of ZrN and Pt/Ru thin films for DRAM applications

被引：27

作者：

AlShareef, HN ^{[1
]}

Chen, X ^{[1
]}

Lichtenwalner, DJ ^{[1
]}

Kingon, AI ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

来源：

THIN SOLID FILMS | 1996年 / 280卷 / 1-2期

关键词：

metallization; oxidation; reaction kinetics; sputtering;

D O I：

10.1016/0040-6090(95)08194-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZrN and Pt/Ru thin films have been grown by an automated ion beam sputter-deposition system. Both materials were evaluated for use as barrier layers (ZrN) and bottom electrodes (Pt/Ru) in dynamic random access memory (DRAM) applications. The ZrN films had resistivities on the order of 250-300 mu Omega cm. The ZrN films were (002) oriented and were rather smooth with an average surface roughness of +/- 17 Angstrom. Analysis of the oxidation kinetics of the ZrN thin films reveals a thermally activated, diffusion-limited oxidation process with an activation energy of 2.5 eV in the temperature range of 500-650 degrees C. This implies that there is an advantage in using ZrN as a barrier layer instead of TiN since the activation energy for oxidation of TiN is 2.05 eV. In addition, preliminary data suggest that a Pt/Ru double layer may be a promising bottom electrode and oxygen diffusion barrier for use in DRAMs with high-permittivity dielectrics.

引用

页码：265 / 270

页数：6

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