Low-Temperature Etching of Cu by Hydrogen-Based Plasmas

被引:37
作者
Wu, Fangyu [1 ]
Levitin, Galit [1 ]
Hess, Dennis W. [1 ]
机构
[1] Georgia Inst Technol, Sch Chem & Biomol Engn, Atlanta, GA 30332 USA
基金
美国国家科学基金会;
关键词
plasma; etching; Cu; low temperature; interconnects; GRAIN-GROWTH; COPPER-FILMS; RESISTIVITY; ADSORPTION; MECHANISM; CHLORINE;
D O I
10.1021/am1003206
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A simple, plasma-based, low-temperature etch process was developed for the subtractive etching of copper (Cu) films.. Hydrogen (H-2) plasma etching of Cu thin films was performed in an inductively coupled plasma (ICP) reactor at temperatures below room temperature. This process achieved anisotropic Cu features and an etch rate of similar to 13 nm/min. Cu etch rate and patterning results were consistent with an etch process that involved both chemical and physicals characteristics. This conclusion was reached by consideration of the plasma as a source of ultraviolet photons, ions, and hydrogen atoms, which promote Cu etching.
引用
收藏
页码:2175 / 2179
页数:5
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