Potential phase control of chromium oxide thin films prepared by laser-initiated organometallic chemical vapor deposition

被引：30

作者：

Cheng, RH

Borca, CN

Dowben, PA ^{[1
]}

Stadler, S

Idzerda, YU

机构：

[1] Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA

[2] Univ Nebraska, Ctr Mat Res & Anal, Behlen Lab Phys, Lincoln, NE 68588 USA

[3] USN, Res Lab, Mat Phys Branch, Washington, DC 20375 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 04期

关键词：

D O I：

10.1063/1.1343846

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have used laser-initiated chemical vapor deposition to grow the chromium oxide thin films through the oxidation of Cr(CO)(6) in an oxygen environment. While both Cr2O3 and CrO2 are present in the film, the relative weight of each phase depends on the oxygen partial pressure. The Curie temperature of the film increases and approaches the bulk T-C of CrO2 (397 K) as the partial oxygen pressure is increased. (C) 2001 American Institute of Physics.

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页码：521 / 523

页数：3

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