Negative differential resistance effects of trench-type InGaAs quantum-wire field-effect transistors with 50-nm gate-length

被引：14
作者：
Jang, KY
Sugaya, T
Hahn, CK
Ogura, M
Komori, K
Shinoda, A
Yonei, K
机构：
[1] Natl Adv Ind Sci & Technol, JSPS, Tsukuba, Ibaraki 3058568, Japan
[2] JST, CREST, Tsukuba, Ibaraki 3058568, Japan
[3] Shibaura Inst Technol, Minato Ku, Tokyo 1088548, Japan
来源：
APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 04期
关键词：
D O I：
10.1063/1.1595150
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effects of negative differential resistance (NDR) have been clearly observed in 50-nm-gate InGaAs/InAlAs trench-type quantum-wire (QWR) field-effect transistors (FETs), which are fabricated by atomic hydrogen-assisted molecular-beam epitaxy. The NDR onset voltage is as low as 0.1 V, and the highest peak-to-valley current ratio is 6.2 at 40 K. The equilateral symmetry of the NDR effect in a QWR FET is also observed. The pronounced NDR effects in a trench-type QWR FET are advantageous for high-speed and low power-consumption devices. (C) 2003 American Institute of Physics.
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页码：701 / 703
页数：3
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