Photo-induced exfoliation of monolayer transition metal dichalcogenide semiconductors

被引:14
作者
Wu, Si-Si [1 ,2 ]
Huang, Teng-Xiang [1 ,2 ]
Lin, Kai-Qiang [1 ,2 ,3 ]
Yao, Xu [1 ,2 ]
Hu, Jing-Ting [1 ,2 ]
Tang, Ding-Liang [1 ,2 ]
Bao, Yi-Fan [1 ,2 ]
Ren, Bin [1 ,2 ]
机构
[1] Xiamen Univ, Collaborat Innovat Ctr Chem Energy Mat, State Key Lab Phys Chem Solid Surfaces, Coll Chem & Chem Engn, Xiamen 361005, Fujian, Peoples R China
[2] Xiamen Univ, MOE Key Lab Spectrochem Anal & Instrumentat, Dept Chem, Coll Chem & Chem Engn, Xiamen 361005, Fujian, Peoples R China
[3] Univ Regensburg, Dept Phys, D-93040 Regensburg, Germany
来源
2D MATERIALS | 2019年 / 6卷 / 04期
关键词
photo-induced exfoliation; 2D semiconductors; transition metal dichalcogenides; monolayer fabrication; thinning; LARGE-AREA SYNTHESIS; MOS2; FABRICATION; SURFACES; LAYERS; WSE2;
D O I
10.1088/2053-1583/ab42b6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Transition metal dichalcogenide (TMDC) monolayers have attracted great attention due to their unique electronic properties, which promise their applications especially in optoelectronics and valleytronics. A simple and reliable way to fabricate the monolayers is highly desirable for wide applications. Herein, we report a photo-induced exfoliation method for the controllable fabrication of monolayer TMDCs proceeded with the oxidation reaction of TMDCs by the photo-generated holes. The commonly used microscope halogen lamp is sufficient to initiate the exfoliation in pure water. A bulk MoS2 flake with a surface area of 10 000 mu m(2) and a thickness of 100 nm can be directly exfoliated down to monolayer within four seconds under a 94 nW mu m(-2) 660 nm laser illumination and by applying 0.1 V potential electrochemically, achieving an astonishing exfoliation speed and efficiency. This method is demonstrated to be applicable also to other semiconducting TMDCs, such as MoSe2, WSe2, and WS2.
引用
收藏
页数:7
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