Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs

被引：27

作者：

Cioni, Marcello ^{[1
]}

Zagni, Nicolo ^{[1
]}

Selmi, Luca ^{[1
]}

Meneghesso, Gaudenzio ^{[2
]}

Meneghini, Matteo ^{[2
]}

Zanoni, Enrico ^{[2
]}

Chini, Alessandro ^{[1
]}

机构：

[1] Univ Modena & Reggio Emilia, Engn Dept Enzo Ferrari, I-41125 Modena, Italy

[2] Univ Padua, Dept Informat Engn, I-35131 Padua, Italy

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2021年 / 68卷 / 07期

关键词：

Temperature measurement; Iron; Current measurement; MODFETs; Logic gates; HEMTs; Voltage measurement; Gallium nitride; high electronmobility transistors (HEMTs); Poole-Frenkel effect (PFE); self-heating; CURRENT COLLAPSE; ALGAN/GAN HEMTS; PERFORMANCE;

D O I：

10.1109/TED.2021.3081613

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this article, we separately investigate the role of electric field and device self-heating (SHE) in enhancing the chargeemission processfromFe-relatedbuffer traps (0.52 eV from E-c) in AlGaN/GaN high electron mobility transistors (HEMTs). The experimental analysis was performed bymeans of drain current transient (DCT) measurements for either: 1) different dissipated power (P-D,P- steady) at constant drain-to-source bias (V-DS,V- steady) or 2) constant P-D,P- steady at different V-DS,V- steady's. We found that: 1) an increase in P-D,P- steady yields an acceleration in the thermally activated emission process, consistently with the temperature rise induced by SHE and 2) on the other hand, the field-effect turned out to be negligible within the investigated voltage range, indicating the absence of the Poole-Frenkel effect (PFE). A qualitative analysis based on the electric field values obtained by numerical simulations is then presented to support the interpretation and conclusions.

引用

页码：3325 / 3332

页数：8

共 34 条

[11] POOLE-FRENKEL EFFECT [J].

HALL, RB .

THIN SOLID FILMS, 1971, 8 (04) :263-&

[12] Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition [J].

Heikman, S ;

Keller, S ;

DenBaars, SP ;

Mishra, UK .

APPLIED PHYSICS LETTERS, 2002, 81 (03) :439-441

[13] Identification of origin ofEC-0.6 eV electron trap level by correlation with iron concentration in n-type GaN grown on GaN freestanding substrate by metalorganic vapor phase epitaxy [J].

Horita, Masahiro ;

Narita, Tetsuo ;

Kachi, Tetsu ;

Suda, Jun .

APPLIED PHYSICS EXPRESS, 2020, 13 (07)

[14]

Hsu SSH, 2016, 2016 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT)

[15] Characterization of Buffer-Related Current Collapse by Buffer Potential Simulation in AlGaN/GaN HEMTs [J].

Jia, Yonghao ;

Xu, Yuehang ;

Lu, Kai ;

Wen, Zhang ;

Huang, An-Dong ;

Guo, Yong-Xin .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (08) :3169-3175

[16] A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors [J].

Joh, Jungwoo ;

del Alamo, Jesus A. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (01) :132-140

[17] Mechanism of Buffer-Related Current Collapse in AlGaN/GaN HEMT [J].

Liu, Jing ;

Huang, Zhongxiao .

2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019,

[18] ELECTRIC-FIELD ENHANCED EMISSION FROM NON-COULOMBIC TRAPS IN SEMICONDUCTORS [J].

MARTIN, PA ;

STREETMAN, BG ;

HESS, K .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) :7409-7415

[19] Self-heating and the temperature dependence of the dc characteristics of GaN heterostructure field effect transistors [J].

McAlister, S. P. ;

Bardwell, J. A. ;

Haffouz, S. ;

Tang, H. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2006, 24 (03) :624-628

[20] Reliability of GaN high-electron-mobility transistors: State of the art and perspectives [J].

Meneghesso, Gaudenzio ;

Verzellesi, Giovanni ;

Danesin, Francesca ;

Rampazzo, Fabiana ;

Zanon, Franco ;

Tazzoli, Augusto ;

Meneghini, Matteo ;

Zanoni, Enrico .

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2008, 8 (02) :332-343

← 1 2 3 4 →