High-Efficiency c-Si Solar Cells Passivated With ALD and PECVD Aluminum Oxide

被引：124

作者：

Saint-Cast, Pierre ^{[1
]}

Benick, Jan ^{[1
]}

Kania, Daniel ^{[1
]}

Weiss, Lucas ^{[1
]}

Hofmann, Marc ^{[1
]}

Rentsch, Jochen ^{[1
]}

Preu, Ralf ^{[1
]}

Glunz, Stefan W. ^{[1
]}

机构：

[1] Fraunhofer Inst Solar Energy Syst, D-79110 Freiburg, Germany

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 07期

关键词：

Aluminum oxide; atomic layer deposition (ALD); high-efficiency solar cells; passivation; plasma-enhanced chemical vapor deposited (PECVD); SURFACE PASSIVATION;

D O I：

10.1109/LED.2010.2049190

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ultrathin (7 nm) atomic layer deposited Al2O3 layers and high-deposition-rate plasma-enhanced chemical vapor deposited AlOx layers have been applied and characterized as rear-surface passivation for high-efficiency silicon solar cells. The excellent efficiency values (up to 21.3%-21.5%) demonstrate that both aluminum oxide deposition processes have a very high potential comparable to the reference cells with SiO2 passivation. The high voltages (similar to 680 mV), the excellent long-wavelength quantum efficiency, and the high short-circuit currents of these cells (similar to 40 mA/cm(2)) are a proof for the low rear-surface recombination velocity and excellent internal rear-surface reflection.

引用

页码：695 / 697

页数：3

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