Low Forward Voltage III-Nitride Red Micro-Light-Emitting Diodes on a Strain Relaxed Template with an InGaN Decomposition Layer

被引：11

作者：

Wong, Matthew S. ^{[1
]}

Chan, Philip ^{[2
]}

Lim, Norleakvisoth ^{[3
]}

Zhang, Haojun ^{[1
]}

White, Ryan C. ^{[1
]}

Speck, James S. ^{[1
]}

Denbaars, Steven P. ^{[1
,2
]}

Nakamura, Shuji ^{[1
,2
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[3] Univ Calif Santa Barbara, Dept Chem Engn, Santa Barbara, CA 93106 USA

来源：

CRYSTALS | 2022年 / 12卷 / 05期

关键词：

red micro-light-emitting diodes; strain relaxed template; III-nitride; HIGH-EFFICIENCY;

D O I：

10.3390/cryst12050721

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this study, III-nitride red micro-light-emitting diodes (mu LEDs) with ultralow forward voltage are demonstrated on a strain relaxed template. The forward voltage ranges between 2.00 V and 2.05 V at 20 A/cm(2) for device dimensions from 5 x 5 to 100 x 100 mu m(2). The mu LEDs emit at 692 nm at 5 A/cm(2) and 637 nm at 100 A/cm(2), corresponding to a blueshift of 55 nm due to the screening of the internal electric field in the quantum wells. The maximum external quantum efficiency and wall-plug efficiency of mu LEDs are 0.31% and 0.21%, respectively. This suggests that efficient III-nitride red mu LEDs can be realized with further material optimizations.

引用

页数：6

共 33 条

[1] Growth of highly relaxed InGaN pseudo-substrates over full 2-in. wafers [J].

Chan, Philip ;

DenBaars, Steven P. ;

Nakamura, Shuji .

APPLIED PHYSICS LETTERS, 2021, 119 (13)

[2] Demonstration of relaxed InGaN-based red LEDs grown with high active region temperature [J].

Chan, Philip ;

Rienzi, Vincent ;

Lim, Norleakvisoth ;

Chang, Hsun-Ming ;

Gordon, Michael ;

DenBaars, Steven P. ;

Nakamura, Shuji .

APPLIED PHYSICS EXPRESS, 2021, 14 (10)

[3] Monolithic Red/Green/Blue Micro-LEDs With HBR and DBR Structures [J].

Chen, Guan-Syun ;

Wei, Bo-Yu ;

Lee, Ching-Ting ;

Lee, Hsin-Ying .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2018, 30 (03) :262-265

[4] Reduction of efficiency droop in c-plane InGaN/GaN light-emitting diodes using a thick single quantum well with doped barriers [J].

Chow, Y. C. ;

Lynsky, C. ;

Wu, F. ;

Nakamura, S. ;

DenBaars, S. P. ;

Weisbuch, C. ;

Speck, J. S. .

APPLIED PHYSICS LETTERS, 2021, 119 (22)

[5] Color temperature tunable white light based on monolithic color-tunable light emitting diodes [J].

El-Ghoroury, Hussein S. ;

Nakajima, Yoshitake ;

Yeh, Milton ;

Liang, Evan ;

Chuang, Chih-Li ;

Chen, J. C. .

OPTICS EXPRESS, 2020, 28 (02) :1206-1215

[6] Evidence of trap-assisted Auger recombination in low radiative efficiency MBE-grown III-nitride LEDs [J].

Espenlaub, Andrew C. ;

Myers, Daniel J. ;

Young, Erin C. ;

Marcinkevicius, Saulius ;

Weisbuch, Claude ;

Speck, James S. .

JOURNAL OF APPLIED PHYSICS, 2019, 126 (18)

[7] Enhanced In incorporation in full InGaN heterostructure grown on relaxed InGaN pseudo-substrate [J].

Even, A. ;

Laval, G. ;

Ledoux, O. ;

Ferret, P. ;

Sotta, D. ;

Guiot, E. ;

Levy, F. ;

Robin, I. C. ;

Dussaigne, A. .

APPLIED PHYSICS LETTERS, 2017, 110 (26)

[8] Semipolar (20(2)over-bar(1)over-bar) InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting [J].

Feezell, Daniel F. ;

Speck, James S. ;

DenBaars, Steven P. ;

Nakamura, Shuji .

JOURNAL OF DISPLAY TECHNOLOGY, 2013, 9 (04) :190-198

[9] Blue, green, and amber InGaN/GaN light-emitting diodes on semipolar {1122} GaN bulk substrates [J].

Funato, Mitsuru ;

Ueda, Masaya ;

Kawakami, Yoichi ;

Narukawa, Yukio ;

Kosugi, Takao ;

Takahashi, Masayoshi ;

Mukai, Takashi .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2006, 45 (24-28) :L659-L662

[10] Mini-LED, Micro-LED and OLED displays: present status and future perspectives [J].

Huang, Yuge ;

Hsiang, En-Lin ;

Deng, Ming-Yang ;

Wu, Shin-Tson .

LIGHT-SCIENCE & APPLICATIONS, 2020, 9 (01)

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