1.5-μm tapered-gain-region lasers with high-CW output powers

被引：50

作者：

Donnelly, JP ^{[1
]}

Walpole, JN ^{[1
]}

Groves, SH ^{[1
]}

Bailey, RJ ^{[1
]}

Missaggia, LJ ^{[1
]}

Napoleone, A ^{[1
]}

Reeder, RE ^{[1
]}

Cook, CC ^{[1
]}

机构：

[1] MIT, Lincoln Lab, Lexington, MA 02420 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 10期

关键词：

optical self-focusing; power lasers; quantum-well lasers; semiconductor device fabrication; semiconductor epitaxial layers; semiconductor lasers;

D O I：

10.1109/68.720266

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-power diode lasers consisting of a ridge-waveguide section coupled to a tapered region have been fabricated in 1.5-mu m InGaAsP-InP multiple-quantum-well material. Self-focusing at high current densities and high-intensity input into the taper section has been identified as a fundamental problem in these devices that has to be dealt with. To date, continuous-wave output powers of > 1 W with approximate to 80% of the power in the near-diffraction-limited central lobe of the far field have been obtained through a judicious choice of device parameters.

引用

页码：1377 / 1379

页数：3

共 9 条

[1]

CHO SH, 1997, P IEEE LAS EL OPT SO, V2, P407

[2] GAINASSB-ALGAASSB TAPERED LASERS EMITTING AT 2-MU-M [J].