Area-efficient transient power-rail electrostatic discharge clamp circuit with mis-triggering immunity in a 65-nm CMOS process

被引:3
作者
Wang, Yuan [1 ]
Lu, Guangyi [1 ]
Guo, Haibing [1 ]
Cao, Jian [1 ]
Jia, Song [1 ]
Zhang, Xing [1 ]
机构
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
关键词
electrostatic discharge (ESD); power-rail clamp circuit; transmission line pulse (TLP); current mirror; mis-triggering; ESD PROTECTION; SUPPLY CLAMP; DESIGN;
D O I
10.1007/s11432-015-5398-3
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
A novel, area-efficient transient power-rail electrostatic discharge (ESD) clamp circuit is proposed in this work. Current-mirror capacitors are used to reduce the layout area. Logic threshold voltages of inverters are modified to ensure a fully active on-state for the clamp device in ESD conditions. The proposed circuit reduces the layout area by about 56% compared with a circuit without current-mirror capacitors. Transmission line pulse (TLP) test results based on a 65-nm CMOS process demonstrate that the proposed circuit is an efficient on-chip ESD protection scheme for this process. In addition, the proposed circuit achieves a good immunity to mis-triggering with respect to fast power-up transitions.
引用
收藏
页数:9
相关论文
共 15 条
[1]   Power-Rail ESD Clamp Circuit With Diode-String ESD Detection to Overcome the Gate Leakage Current in a 40-nm CMOS Process [J].
Altolaguirre, Federico Agustin ;
Ker, Ming-Dou .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (10) :3500-3507
[2]   THE IMPACT OF TECHNOLOGY SCALING ON ESD ROBUSTNESS AND PROTECTION CIRCUIT-DESIGN [J].
AMERASEKERA, A ;
DUVVURY, C .
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY PART A, 1995, 18 (02) :314-320
[3]  
[Anonymous], 2013, PROC S VLSI TECHNOL
[4]  
Barth JE, 2001, IEEE T ELECTRON PA M, V24, P99, DOI 10.1109/6104.930960
[5]   Area-Efficient ESD-Transient Detection Circuit With Smaller Capacitance for On-Chip Power-Rail ESD Protection in CMOS ICs [J].
Chen, Shih-Hung ;
Ker, Ming-Dou .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2009, 56 (05) :359-363
[6]   Whole-chip ESD protection design with efficient VDD-to-VSS ESD clamp circuits for submicron CMOS VLSI [J].
Ker, MD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (01) :173-183
[7]  
LI JJ, 2006, P EOS ESD S, P179
[8]   A novel ESD power supply clamp circuit with double pull-down paths [J].
Liu HongXia ;
Yang ZhaoNian ;
Li Li ;
Zhuo QingQing .
SCIENCE CHINA-INFORMATION SCIENCES, 2013, 56 (10) :1-8
[9]   Investigation on the layout strategy of ggNMOS ESD protection devices for uniform conduction behavior and optimal width scaling [J].
Lu GuangYi ;
Wang Yuan ;
Zhang LiZhong ;
Cao Jian ;
Jia Song ;
Zhang Xing .
SCIENCE CHINA-INFORMATION SCIENCES, 2015, 58 (04) :1-9
[10]  
Sarbishaei H., 2007, P EOS ESD S, P395