Doping Effects and Charge-Transfer Dynamics at Hybrid Perovskite/Graphene Interfaces

被引：11
作者：
Brus, Viktor V. [1 ]
Lang, Felix [1 ]
Fengler, Steffen [1 ]
Dittrich, Thomas [1 ]
Rappich, Joerg [1 ]
Nickel, Norbert H. [1 ]
机构：
[1] Helmholtz Zentrum Berlin Mat & Energie GmbH, Inst Silizium Photovolta, D-12489 Berlin, Germany
来源：
ADVANCED MATERIALS INTERFACES | 2018年 / 5卷 / 20期
关键词：
charge transport; doping; graphene; perovskite; METHYLAMMONIUM LEAD IODIDE; WORK FUNCTION; GRAPHENE; HYSTERESIS; BARRISTOR; ELECTRODE;
D O I：
10.1002/admi.201800826
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
In this work doping effects and charge transfer processes at the perovskite/graphene interface in the dark and under illumination are investigated. Hall effect, field effect, and surface photovoltage measurements suggest that hybrid perovskite layers induce strong n-type doping of graphene after annealing at low temperature (330 K) in vacuum. It is found that the observed photoinduced changes in the electronic properties of graphene, functionalized by a hybrid organic-inorganic perovskite layer, are caused by two independent mechanisms with different time scales: (i) a fast collection of photogenerated holes by graphene from the perovskite layer and (ii) a slow ion rearrangement in the perovskite lattice at the perovskite/graphene interface. The observed annealing-induced n-type and photoinduced p-type doping effects allow to reversibly switch the type of conduction of the perovskite/graphene system.
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页数：7
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