Laser wire bonding in power transistors

被引：0

作者：

Kostrubiec, F ^{[1
]}

Pawlak, R ^{[1
]}

机构：

[1] Lodz Tech Univ, Inst Theoret Elect Engn Metrol & Mat Sci, PL-90924 Lodz, Poland

来源：

LASER TECHNOLOGY VI: APPLICATIONS | 2000年 / 4238卷

关键词：

power transistors; pulsed laser; wire bonding;

D O I：

10.1117/12.405978

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Attempts at increasing the reliability of assembly of power transistors the authors have proposed a new method for thick wire bonding. Bonding produced in this technology has the form of weld made by the pulsed laser beam. The results of some investigations into the proposed method are presented. The results of studies on semiconductor test structures bring the hope for the positive solution to the problem of increasing the reliability of assembly of such structures.

引用

页码：209 / 213

页数：5