Some surface and interface characterization and metrology requirements in the wafer processing industry

被引:2
|
作者
Brundle, C. R. [1 ]
机构
[1] CR Brundle & Associates, Soquel, CA 95073 USA
关键词
wafer industry; characterization; metrology; XPS; thin films; ULTRATHIN SIO2; XPS;
D O I
10.1002/sia.3499
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
With the rapid decrease in thickness of deposited layers during silicon wafer processing, there has been a parallel increase in the use of surface/interface materials analysis techniques. There is now little distinction between surface/interface and thin film analysis when films are only a few nm thick. This brief review presents some of the general concepts and needs for both materials characterization and metrology; some of the current requirements these needs impose on analytical methods; and briefly reviews the status of a few of the techniques better known to the surface/interface analysis community, particularly XPS. Copyright (C) 2010 John Wiley & Sons, Ltd.
引用
收藏
页码:770 / 774
页数:5
相关论文
共 50 条
  • [41] Characterization of Silicon Wafer Surface Irradiated with Fiber Laser
    Farrokhi, Hamid
    Zhou, Wei
    Zheng, Hong Yu
    Li, Zhongli
    ADVANCED PRECISION ENGINEERING, 2010, 447-448 : 715 - +
  • [42] CHARACTERIZATION OF ABRASIVELY PROCESSED SURFACE OF SI(100) WAFER
    OGASAWARA, T
    TSUCHIDA, M
    YAGI, H
    KURODA, T
    MORI, H
    IWAKURO, H
    TAMAKI, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (5A): : 2284 - 2285
  • [43] SOME FEATURES OF RADIATION PROCESSING IN THE PLASTICS INDUSTRY
    DOBO, J
    RADIATION PHYSICS AND CHEMISTRY, 1985, 26 (05): : 555 - 558
  • [44] Process monitoring and surface characterization with in-line XPS metrology
    Cabuil, N.
    Le Gouil, A.
    Doclot, O.
    Dickson, B.
    Lagha, A.
    Aminpur, M.
    Chaton, C.
    Royer, J-C.
    SOLID STATE TECHNOLOGY, 2007, 50 (10) : 48 - 51
  • [45] Interface trap characterization of alternate gate dielectrics with elastic gate MOS metrology
    Bae, SH
    Hillard, RJ
    Olsen, CS
    Benjamin, MC
    Thirupapuliyur, S
    Ho, N
    Kraus, PA
    CHARACTERIZATION AND METROLOGY FOR ULSI TECHNOLOGY 2005, 2005, 788 : 191 - 193
  • [46] SURFACE CHARACTERIZATION IN MINERAL PROCESSING
    FUERSTENAU, DW
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1981, 182 (AUG): : 44 - INDE
  • [47] SURFACE CHARACTERIZATION IN MINERAL PROCESSING
    FUERSTENAU, DW
    CHANDER, S
    ACS SYMPOSIUM SERIES, 1982, 199 : 283 - 312
  • [48] Junction Photovoltage Metrology and High Resolution Mapping of Ion Implants Electrically Isolated from the Wafer Surface
    Korsos, Ferenc
    Kis-Szabo, Krisztian
    Don, Eric
    Pap, Aron
    Pavelka, Tibor
    Laviron, Cyrille
    Pfeffer, Marcus
    ION IMPLANTATION TECHNOLOGY 2008, 2008, 1066 : 113 - +
  • [49] Characterization of water requirements in Extremadura (Spain) for processing tomato
    Paniagua, L. L.
    Garcia-Martin, A.
    Rozas, M. A.
    Ordiales, E.
    Llerena, J. L.
    XIV INTERNATIONAL SYMPOSIUM ON PROCESSING TOMATO, 2017, 1159 : 51 - 56
  • [50] Image-processing-based model for the characterization of surface roughness and subsurface damage of silicon wafer in diamond wire sawing
    Yin, Shenxin
    Xiao, Huapan
    Wu, Heng
    Wang, Chunjin
    Cheung, Chi Fai
    PRECISION ENGINEERING-JOURNAL OF THE INTERNATIONAL SOCIETIES FOR PRECISION ENGINEERING AND NANOTECHNOLOGY, 2022, 77 : 263 - 274