Some surface and interface characterization and metrology requirements in the wafer processing industry

被引:2
|
作者
Brundle, C. R. [1 ]
机构
[1] CR Brundle & Associates, Soquel, CA 95073 USA
关键词
wafer industry; characterization; metrology; XPS; thin films; ULTRATHIN SIO2; XPS;
D O I
10.1002/sia.3499
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
With the rapid decrease in thickness of deposited layers during silicon wafer processing, there has been a parallel increase in the use of surface/interface materials analysis techniques. There is now little distinction between surface/interface and thin film analysis when films are only a few nm thick. This brief review presents some of the general concepts and needs for both materials characterization and metrology; some of the current requirements these needs impose on analytical methods; and briefly reviews the status of a few of the techniques better known to the surface/interface analysis community, particularly XPS. Copyright (C) 2010 John Wiley & Sons, Ltd.
引用
收藏
页码:770 / 774
页数:5
相关论文
共 50 条
  • [1] Metrology requirements for single wafer ion implanters
    Olson, Joseph C.
    Angel, Gordon
    Gupta, Atul
    Mollica, Rosario
    Distaso, Daniel
    Liu, Jinning
    ION IMPLANTATION TECHNOLOGY, 2006, 866 : 538 - +
  • [2] Metrology for Characterization of Wafer Thickness Uniformity During 3DS-IC Processing
    Dunn, Tom
    Lee, Chris
    Tronolone, Mark
    Shorey, Aric
    2012 IEEE 62ND ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC), 2012, : 1239 - 1244
  • [3] Silicon wafer requirements for ULSI device processing
    Illuzzi, F
    GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 2002, 82-84 : 1 - 6
  • [4] Near surface photo-voltage for silicon wafer metrology
    Tsidilkovski, E
    Steeples, K
    Characterization and Metrology for ULSI Technology 2005, 2005, 788 : 589 - 593
  • [5] Some selected problems of optical metrology in industry
    Rottenkolber, H
    INTERNATIONAL CONFERENCE ON APPLIED OPTICAL METROLOGY, 1998, 3407 : 225 - 235
  • [6] Compressed Sensing for Surface Characterization and Metrology
    Ma, Jianwei
    IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 2010, 59 (06) : 1600 - 1615
  • [7] Full Wafer Stress Metrology for Dielectric Film Characterization: Use Case
    Brouzet, V.
    Gredy, V.
    Chenevas-Paule, F.
    Le-Chao, K.
    Guiheux, D.
    Laurent, A.
    Coutellier, V.
    Le-Cunff, D.
    2019 30TH ANNUAL SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE (ASMC), 2019,
  • [8] Deep submicron 3D surface metrology for 300 mm wafer characterization using UV coherence microscopy
    Montgomery, PC
    Montaner, D
    MICROELECTRONIC ENGINEERING, 1999, 45 (2-3) : 291 - 297
  • [9] Processing and characterization of GaAs surface-barrier heterostructures with texturized interface
    Borkovskaya, OY
    Dmitruk, NL
    Mamontova, IB
    Mamykin, SV
    ASDAM'98, SECOND INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, CONFERENCE PROCEEDINGS, 1998, : 71 - 74
  • [10] Modeling a Wet Wafer Surface Processing Chain
    Huber, Max
    Zienert, Andreas
    Schuster, Joerg
    2023 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, IITC AND IEEE MATERIALS FOR ADVANCED METALLIZATION CONFERENCE, MAM, IITC/MAM, 2023,