Some surface and interface characterization and metrology requirements in the wafer processing industry

被引:2
作者
Brundle, C. R. [1 ]
机构
[1] CR Brundle & Associates, Soquel, CA 95073 USA
关键词
wafer industry; characterization; metrology; XPS; thin films; ULTRATHIN SIO2; XPS;
D O I
10.1002/sia.3499
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
With the rapid decrease in thickness of deposited layers during silicon wafer processing, there has been a parallel increase in the use of surface/interface materials analysis techniques. There is now little distinction between surface/interface and thin film analysis when films are only a few nm thick. This brief review presents some of the general concepts and needs for both materials characterization and metrology; some of the current requirements these needs impose on analytical methods; and briefly reviews the status of a few of the techniques better known to the surface/interface analysis community, particularly XPS. Copyright (C) 2010 John Wiley & Sons, Ltd.
引用
收藏
页码:770 / 774
页数:5
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