Wide band gap a-SiC:H films for optoelectronic applications

被引：18

作者：

Giorgis, F

Giuliani, F

Pirri, CF

Tresso, E

Conde, JP

Chu, V

机构：

[1] Politecn Torino, Dipartimento Fis, I-10129 Turin, Italy

[2] Politecn Torino, Unita INFM, I-10129 Turin, Italy

[3] Univ Tecn Lisboa, Dept Mat Engn, Inst Super Tecn, P-1096 Lisbon, Portugal

[4] INESC, P-1000 Lisbon, Portugal

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1998年 / 227卷

关键词：

RF-CVD; a-SiC : H films; ECR-CVD;

D O I：

10.1016/S0022-3093(98)00090-8

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

a-SiC:H samples over the entire compositional range have been deposited by using 13.56 MHz radio frequency chemical vapor deposition (RF-CVD) with C2H2 carbon source and electron cyclotron resonance chemical vapor deposition with C2H4 source. Films with the largest deposition rates have been obtained in the C-rich regime with defect density similar to 10(17) cm(-3). Compositional, optical, structural and radiative emission properties have been investigated and correlated for specimens obtained from both deposition techniques. (C) 1998 Elsevier Science B.V. All rights reserved.

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收藏

页码：465 / 469

页数：5

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