Effect of GaAs spacer layer thickness on optical properties of multi-stacked InAs/GaAs quantum dots

被引：4
|
作者：
Mohanta, Antaryami [1 ]
Jang, Der-Jun [1 ]
Wang, Fu-Yu [1 ]
Wang, J. S. [2 ,3 ]
机构：
[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan
[2] Chung Yuan Christian Univ, Dept Phys, Chungli 32023, Taiwan
[3] Chung Yuan Christian Univ, Ctr Nanotechnol, Chungli 32023, Taiwan
来源：
JOURNAL OF LUMINESCENCE | 2016年 / 175卷
关键词：
Photoluminescence; Pump-probe reflection spectroscopy; InAs quantum dots; Free-carrier absorption; 1.3; MU-M; CARRIER CAPTURE; INAS ISLANDS; SPECTROSCOPY; RELAXATION; STRAIN;
D O I：
10.1016/j.jlumin.2016.01.011
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Effect of GaAs spacer layer thickness (d(GaAs)) on multi-stacked InAs/GaAs quantum dots is investigated by photoluminescence (PL) and excitation wavelength (lambda(exc)) dependent pump-probe reflection spectroscopy. Dominance of light hole exciton transition in the PL spectra is observed at smaller d(GaAs) ( < 15 nm). Double maxima (Delta R/R)(max1) and (Delta R/R)(max2) appear in the differential reflection spectra (DRS) at intermediate A beyond which positive to negative reversal of the DRS is observed due to dominating effect of inter band absorption in InAs wetting layer. The lambda(exc) at which double maxima occur, and the positive to negative reversal starts is found to be dependent on dGaAs. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：16 / 20
页数：5
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