A Ka-band monolithic CPW-Mode T/R modules using 0.15 μm gate-length GaAs pBEMT technology

被引：1

作者：

Cheng, Chia-Shih ^{[1
]}

Wei, Chien-Cheng ^{[1
]}

Chiu, Hsien-Chin ^{[1
]}

Chiang, Yi-Chyun ^{[1
]}

Fu, Jeffrey S. ^{[1
]}

Wu, Chia-Song ^{[2
]}

机构：

[1] Chang Gung Univ, Dept Elect Engn, Tao Yuan, Taiwan

[2] Vanrung Univ, Dept Elect Engn, Taoyuan, Taiwan

来源：

2008 GLOBAL SYMPOSIUM ON MILLIMETER WAVES | 2008年

关键词：

millimeter wave; GaAs pHEMT; CPW; amplifier; oscillator; mixer;

D O I：

10.1109/GSMM.2008.4534565

中图分类号：

P1 [天文学];

学科分类号：

0704 ;

摘要：

This paper presents the designs and measurement results of the monolithic coplanar waveguide (CPW) Ka-band millimeter wave integrated circuits, including low noise amplifier, single-balance mixer, power amplifier, and oscillator. The millimeter wave ICs were fabricated with a 0.15 mu m T-shape gate GaAs pseudomorphic HEMTs technology, carried out by commercially available foundry. The CPW process was applied in this work to avoid backside process and various impedances can also be adjusted by line width and gap. Therefore, these sub-circuits can be integrated using CPW technology easily and no via-hole process was involved to reduce the process cost.

引用

页码：87 / +

页数：2

共 4 条

[1] Signal generation, control, and frequency conversion AlGaN/GaN HEMT MMICs [J].