Back-Side Readout Silicon Photomultiplier

被引：3

作者：

Choong, Woon-Seng ^{[1
]}

Holland, Stephen E. ^{[1
]}

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2012年 / 59卷 / 08期

基金：

美国国家卫生研究院;

关键词：

Avalanche breakdown; avalanche photodiodes; photodetectors; silicon devices; silicon radiation detectors; DETECTORS; RESISTORS; SIPMS;

D O I：

10.1109/TED.2012.2200684

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a novel structure for the back-side readout silicon photomultiplier (SiPM). Current SiPMs are front-illuminated structures with front-side readout, which have relatively small geometric fill factor leading to degradation in their photon detection efficiency (PDE). Back-side readout devices will provide an advantageous solution to achieve high PDE. We designed and investigated a novel structure that would allow backside readout while creating a region of high electric field optimized for avalanche breakdown. In addition, this structure has relatively high fill factor and also allows the direct coupling of the individual microcell of the SiPM to application-specific integrated circuits. We will discuss the performance that can be attained with this structure through device simulation and the process flow that can be used to fabricate this structure through process simulation.

引用

页码：2187 / 2191

页数：5

共 19 条

[1]

Buzhan P., 2001, ICFA INSTRUMENTATION, V23, P28

[2] The Digital Silicon Photomultiplier - Principle of Operation and Intrinsic Detector Performance [J].

Frach, Thomas ;

Prescher, Gordian ;

Degenhardt, Carsten ;

de Gruyter, Rik ;

Schmitz, Anja ;

Ballizany, Rob .

2009 IEEE NUCLEAR SCIENCE SYMPOSIUM CONFERENCE RECORD, VOLS 1-5, 2009, :1959-1965

[3] A low-noise single-photon detector implemented in a 130 nm CMOS imaging process [J].

Gersbach, Marek ;

Richardson, Justin ;

Mazaleyrat, Eric ;

Hardillier, Stephane ;

Niclass, Cristiano ;

Henderson, Robert ;

Grant, Lindsay ;

Charbon, Edoardo .

SOLID-STATE ELECTRONICS, 2009, 53 (07) :803-808

[4] Optimal p-stop pattern for the n-side strip isolation of silicon microstrip detectors [J].

Iwata, Y ;

Ohsugi, T ;

Fujita, K ;

Kitabayashi, H ;

Yamamoto, K ;

Yamamura, K ;

Unno, Y ;

Kondo, T ;

Terada, S ;

Kohriki, T ;

Asai, M ;

Nakano, I ;

Takashima, R .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1998, 45 (03) :303-309

[5] Silicon detectors with 3-D electrode arrays: Fabrication and initial test results [J].

Kenney, C ;

Parker, S ;

Segal, J ;

Storment, C .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1999, 46 (04) :1224-1236

[6] ON THE BREMSSTRAHLUNG ORIGIN OF HOT-CARRIER-INDUCED PHOTONS IN SILICON DEVICES [J].

LACAITA, AL ;

ZAPPA, F ;

BIGLIARDI, S ;

MANFREDI, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (03) :577-582

[7]

Ma T. P., 1989, Ionizing Radiation Effects in MOS Devices and Circuits

[8] Light emission in Si avalanches [J].

Mirzoyan, R. ;

Kosyra, R. ;

Moser, H. -G. .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2009, 610 (01) :98-100

[9] Advances in multipixel Geiger-mode avalanche photodiodes (silicon photomultiplies) [J].

Musienko, Yuri .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2009, 598 (01) :213-216

[10] The first measurements on SiPMs with bulk integrated quench resistors [J].

Ninkovic, Jelena ;

Andricek, Ladislav ;

Jendrisyk, Christian ;

Liemann, Gerhard ;

Lutz, Gerhard ;

Moser, Hans-Guenther ;

Richter, Rainer ;

Schopper, Florian .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2011, 628 (01) :407-410

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