Implications of Weak Link Effects on Thermal Characteristics of Transition-Edge Sensors

被引：10

作者：

Bailey, C. N. ^{[1
]}

Adams, J. S. ^{[2
,3
]}

Bandler, S. R. ^{[4
,5
]}

Brekosky, R. P. ^{[6
]}

Chervenak, J. A.

Eckart, M. E. ^{[2
,3
]}

Finkbeiner, F. M. ^{[7
]}

Kelley, R. L.

Kelly, D. P. ^{[8
]}

Kilbourne, C. A.

Porter, F. S.

Sadleir, J. E.

Smith, S. J. ^{[2
,3
]}

机构：

[1] NASA, Goddard Space Flight Ctr, Postdoctoral Program, Greenbelt, MD 20771 USA

[2] CRESST, Bethesda, MD 21250 USA

[3] Univ Maryland Baltimore Cty, Baltimore, MD 21250 USA

[4] CRESST, College Pk, MD 20742 USA

[5] Univ Maryland, College Pk, MD 20742 USA

[6] Northrop Grumman Informat Technol, Mclean, VA 22102 USA

[7] Wyle Informat Syst, Mclean, VA 22102 USA

[8] Muniz Engn Inc, Seabrook, MD 20706 USA

来源：

JOURNAL OF LOW TEMPERATURE PHYSICS | 2012年 / 167卷 / 3-4期

关键词：

Transition edge sensor (TES); Thermal conductance; Weak link effects; Kapitza resistance; Electron-phonon coupling;

D O I：

10.1007/s10909-012-0562-2

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Weak link behavior in transition-edge sensor (TES) microcalorimeters creates the need for a more careful characterization of a device's thermal characteristics through its transition. This is particularly true for small TESs where a small change in the bias current results in large changes in effective transition temperature. To correctly interpret measurements, especially complex impedance, it is crucial to know the temperature-dependent thermal conductance, G(T), and heat capacity, C(T), at each point through the transition. We present data illustrating these effects and discuss how we overcome the challenges that are present in accurately determining G and T from I-V curves. We also show how these weak link effects vary with TES size. Additionally, we use this improved understanding of G(T) to determine that, for these TES microcalorimeters, Kaptiza boundary resistance dominates the G of devices with absorbers while the electron-phonon coupling also needs to be considered when determining G for devices without absorbers.

引用

页码：121 / 128

页数：8

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