Asymmetric Split-Vacancy Defects in SiC Polytypes: A Combined Theoretical and Electron Spin Resonance Study

被引：21

作者：

Ivady, Viktor ^{[1
]}

Gallstrom, Andreas ^{[2
]}

Nguyen Tien Son ^{[2
]}

Janzen, Erik ^{[2
]}

Gali, Adam ^{[1
,3
]}

机构：

[1] Hungarian Acad Sci, Res Inst Solid State Phys & Opt, H-1525 Budapest, Hungary

[2] Linkoping Univ, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden

[3] Budapest Univ Technol & Econ, Dept Atom Phys, H-1111 Budapest, Hungary

来源：

PHYSICAL REVIEW LETTERS | 2011年 / 107卷 / 19期

基金：

瑞典研究理事会;

关键词：

SILICON; INAS;

D O I：

10.1103/PhysRevLett.107.195501

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Transition metal defects were studied in different polytypes of silicon carbide (SiC) by ab initio supercell calculations. We found asymmetric split-vacancy (ASV) complexes for these defects that preferentially form at only one site in hexagonal polytypes, and they may not be detectable at all in cubic polytype. Electron spin resonance study demonstrates the existence of ASV complex in niobium doped 4H polytype of SiC.

引用

页数：5

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