Tunable Low-Voltage Dual-Directional ESD Protection for RFICs

被引：0

作者：

Liu, Jian ^{[1
]}

Lin, Lin ^{[1
]}

Wang, Xin ^{[1
]}

Zhao, Hui ^{[1
]}

Tang, He ^{[1
]}

Fang, Qiang ^{[1
]}

Wang, Albert ^{[1
,2
]}

Yang, Liwu

Xie, Haolu ^{[3
]}

Fan, Siqiang ^{[4
]}

Zhao, Bin ^{[4
]}

Zhang, Gary ^{[5
]}

Wang, Xingang ^{[5
]}

机构：

[1] Univ Calif Riverside, Dept EE, Riverside, CA 92521 USA

[2] TransRF Corp, Walnut, CA USA

[3] Fudan Univ, Shanghai, Peoples R China

[4] Freescale Semicond Inc, Irvine, CA USA

[5] Skyworks, Woburn, MA USA

来源：

2011 IEEE RADIO AND WIRELESS SYMPOSIUM (RWS) | 2011年

关键词：

ESD protection; SCR; dual-directional; RF IC; tunable triggering; LOW TRIGGER-VOLTAGE; CIRCUIT; CMOS; SCR;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports a tunable low triggering voltage, dual-directional SCR ESD protection structure in CMOS for RF ICs. A new embedded gate-coupling technique is used to reduce and adjust its triggering voltage. Experiment shows a low discharging resistance of similar to 0.26 Omega, low leakage current of similar to 0.19nA, low parasitic capacitance of similar to 150fF and ultra fast response time of similar to 100pS. This structure achieves ESD protection of >9.20kV HBM and >500V CDM for a 90 mu m device. A high ESD protection to Si ratio of ESDV similar to 8.17V/mu m(2) is obtained for RF IC applications.

引用

页码：279 / 282

页数：4

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