Low-temperature, solution-processed molybdenum oxide hole-collection layer for organic photovoltaics

被引:147
作者
Hammond, Scott R. [1 ]
Meyer, Jens [2 ]
Widjonarko, N. Edwin [1 ]
Ndione, Paul F. [1 ]
Sigdel, Ajaya K. [1 ]
Garcia, Andres [1 ]
Miedaner, Alexander [1 ]
Lloyd, Matthew T. [1 ]
Kahn, Antoine [2 ]
Ginley, David S. [1 ]
Berry, Joseph J. [1 ]
Olson, Dana C. [1 ]
机构
[1] Natl Ctr Photovolta, Natl Renewable Energy Lab, Golden, CO USA
[2] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
关键词
TRANSITION-METAL OXIDES; ANODE INTERFACIAL LAYER; SOLAR-CELLS; INJECTION LAYER; WORK FUNCTION; THIN-FILMS; EFFICIENT; INTERLAYERS; AIR;
D O I
10.1039/c2jm14911g
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have utilized a commercially available metal-organic precursor to develop a new, low-temperature, solution-processed molybdenum oxide (MoOx) hole-collection layer (HCL) for organic photovoltaic (OPV) devices that is compatible with high-throughput roll-to-roll manufacturing. Thermogravimetric analysis indicates complete decomposition of the metal-organic precursor by 115 degrees C in air. Acetonitrile solutions spin-cast in a N-2 atmosphere and annealed in air yield continuous thin films of MoOx. Ultraviolet, inverse, and X-ray photoemission spectroscopies confirm the formation of MoOx and, along with Kelvin probe measurements, provide detailed information about the energetics of the MoOx thin films. Incorporation of these films into conventional architecture bulk heterojunction OPV devices with poly(3-hexylthiophene) and [6,6]-phenyl-C-61 butyric acid methyl ester afford comparable power conversion efficiencies to those obtained with the industry-standard material for hole injection and collection: poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS). The MoOx HCL devices exhibit slightly reduced open circuit voltages and short circuit current densities with respect to the PEDOT: PSS HCL devices, likely due in part to charge recombination at Mo5+ gap states in the MoOx HCL, and demonstrate enhanced fill factors due to reduced series resistance in the MoOx HCL.
引用
收藏
页码:3249 / 3254
页数:6
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