Phase transitions and incommensurability in the layered semiconductor TlInS2-an NMR study

被引:13
作者
Panich, A. M. [1 ]
Mogilyansky, D. [2 ]
Sardarly, R. M. [3 ]
机构
[1] Ben Gurion Univ Negev, Dept Phys, IL-84105 Beer Sheva, Israel
[2] Ben Gurion Univ Negev, Inst Appl Res, IL-84105 Beer Sheva, Israel
[3] Azerbaijan Natl Acad Sci, Inst Radiat Problems, AZ-1143 Baku, Azerbaijan
关键词
TERNARY CHALCOGENIDES; CRYSTAL; OSCILLATIONS; TEMPERATURE; RESONANCE; TLGASE2; TLINTE2; SYSTEMS;
D O I
10.1088/0953-8984/24/13/135901
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We report on the first NMR study of powder and single crystal samples of thallium indium sulfide, TlInS2. The crystal under study is a pure single-layer TlInS2 polytype. Our findings show that transformation from the high temperature paraelectric phase to the low temperature ferroelectric phase occurs via an incommensurate phase that exists in the temperature range from T-c = 192 K to T-i = 205 K. On approaching the phase transition at T-i from above, the crystal exhibits a soft mode behavior. A discrepancy in the literature data on the phase transitions in TlInS2 is discussed and ascribed to polytypism of the TlInS2 crystals.
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页数:5
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