A new sol-gel route to prepare dense Al2O3 thin films

被引：24

作者：

Hu, Baofu ^{[1
]}

Jia, Erguang ^{[1
]}

Du, Baoli ^{[1
]}

Yin, Yuehong ^{[1
]}

机构：

[1] Henan Polytech Univ, Sch Phys & Elect Informat Engn, Jiaozuo 454000, Peoples R China

来源：

CERAMICS INTERNATIONAL | 2016年 / 42卷 / 15期

基金：

中国国家自然科学基金;

关键词：

Sol-gel; Al2O3; films; Spin-coating; Chelating agent; ATOMIC LAYER DEPOSITION; ELECTRICAL-PROPERTIES; COATINGS; GROWTH;

D O I：

10.1016/j.ceramint.2016.07.181

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Anew sol-gel route has been applied to synthetize dense Al(2)O(3)thin films from aluminum isopropoxide (Al(OPri)(3))as raw precursor material. The results show that, in the solution, acetylacetone (AcAc) and aluminum form a complex compound which effectively suppresses the growth of colloidal particles and makes the sol very stable. Al(2)O(3)thin films fabricated by spin-coating method and calcined at 500 degrees C for 3 h possess an amorphous structure and exhibit a highly homogeneous surface texture without evidence of holes or cracks throughout the film. Moreover, the prepared films display a low leakage current and a high transmittance. This new sol-gel route appears to be a highly promising method to synthetize dense Al2O3 thin films from Al(OPri)(3), and could provide a wide range of optical and electric applications. (C) 2016 Published by Elsevier Ltd and Techna Group S.r.l.

引用

页码：16867 / 16871

页数：5

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