Electrically pumped 1550 nm single mode III-V-on-silicon laser with resonant grating cavity mirrors

被引:15
作者
De Koninck, Yannick [1 ,2 ]
Roelkens, Gunther [1 ,2 ]
Baets, Roel [1 ,2 ]
机构
[1] Univ Ghent, IMEC, Dept Informat Technol, Photon Res Grp, B-9000 Ghent, Belgium
[2] Ctr Nano & Biophoton NB Photon, B-9000 Ghent, Belgium
关键词
silicon photonics; heterogeneous integration; lasers; BCB bonding; III-V processing;
D O I
10.1002/lpor.201400448
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
This article presents a novel III-V on silicon laser. This work exploits the phenomenon that a passive silicon cavity, side-coupled to a III-V waveguide, will provide high and narrow-band reflectivity into the III-V waveguide: the resonant mirror. This results in an electrically pumped laser with a threshold current of 4 mA and a side-mode suppression ratio up to 48 dB.
引用
收藏
页码:L6 / L10
页数:5
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