Fabrication of butt-coupled SGDBR laser integrated with semiconductor optical amplifier having a lateral tapered waveguide

被引:16
|
作者
Oh, SH [1 ]
Ko, H
Kim, KS
Lee, JM
Lee, CW
Kwon, OK
Park, S
Park, MH
机构
[1] ETRI, Basic Res Lab, Taejon, South Korea
[2] Suncheon Natl Univ, Dept Mat & Met Engn, Sunchon, South Korea
关键词
butt coupling; integrated laser; tunable laser; integrated SOA; SGDBR laser; PBH structure;
D O I
10.4218/etrij.05.0905.0003
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have demonstrated a high-power sampled grating distributed Bragg reflector (SGDBR) laser integrated monolithically with a widely tunable semiconductor optical amplifier (SOA) having a lateral tapered waveguide, which is the first to emit a fiber-coupled output power of more than 10 dBm using a planar buried heterostructure (PBH). The output facet reflectivity of the integrated SOA using a lateral tapered waveguide and two-layer AR coating of TiO2 and SiO2 was lower than 3 X 10(4) over a wide bandwidth of 85 nm. The spectra of 40 channels spaced by 50 GHz within the tuning range of 33 nm were obtained by a precise control of SG and phase control currents. A side-mode suppression ratio of more than 35 dB was obtained in the whole tuning range. Fiber-coupled output power of more than 11 dBm and an output power variation of less than 1 dB were obtained for the whole tuning range.
引用
收藏
页码:551 / 556
页数:6
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