Sol-gel deposited Sb-doped tin oxide films

被引：25

作者：

Guglielmi, M ^{[1
]}

Menegazzo, E

Paolizzi, M

Gasparro, G

Ganz, D

Pütz, J

Aegerter, MA

Hubert-Pfalzgraf, L

Pascual, C

Durán, A

Willems, HX

Van Bommel, M

Büttgenbach, L

Costa, L

机构：

[1] Univ Padua, Dipartimento Ingn Meccan, I-35100 Padua, Italy

[2] Ist Giordano SPA, Bellaria, RN, Italy

[3] Inst Neue Mat, INM, D-66123 Saarbrucken, Germany

[4] URA CNRS, Lab Chim Mol, F-06108 Nice, France

[5] CSIC, Inst Ceram & Vidrio, Madrid 28500, Spain

[6] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands

[7] ZGE, Fa E Merc, D-64293 Darmstadt, Germany

[8] Gel Design & Engn GDE, I-28100 Novara, Italy

来源：

JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY | 1998年 / 13卷 / 1-3期

关键词：

thin films; transparent conductors; Sb-doped tin oxide; optical properties; electrical properties;

D O I：

10.1023/A:1008636804449

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The structural, electrical and optical properties of single sol-gel derived antimony-doped tin oxide (ATO) films sintered at 550 degrees C have been measured. The reproducibility of both the preparation and the characterization procedures have been tested by a round-robin test involving eight laboratories within a Concerted European Action (CEA) project. The resistivity measured as a function of Sb content has been obtained by electric and reflectance and transmission measurements. Their differences are discussed in terms of structural and grain boundary effects. An increase of Sb content results in a decrease of the crystallite size (7.0 to 5.4 nm) and a greater influence of the grain boundary.

引用

页码：679 / 683

页数：5

共 19 条

[1] THICKNESS DEPENDENCE OF TRANSPORT-PROPERTIES OF DOPED POLYCRYSTALLINE TIN OXIDE-FILMS [J].