Measurement of the MOSFET drain current variation under high gate voltage

被引：0

作者：

Chagawa, Tetsuo ^{[1
]}

Terada, Kazuo ^{[1
]}

Xiang, Jianyu ^{[1
]}

Tsuji, Katsuhiro ^{[1
]}

Tsunomura, Takaaki ^{[2
]}

Nishida, Akio ^{[2
]}

机构：

[1] Hiroshima City Univ, Asaminami Ku, Fac Informat Sci, 3-4-1 Ozuka Higashi, Hiroshima 7313194, Japan

[2] MIRAI Selete, Ibaraki 3058569, Japan

来源：

2008 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, CONFERENCE PROCEEDINGS | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The method for accurately measuring the drain current of the MOSFETs, which are integrated in an array and are biased at high gate voltage, is studied. Feedback loop in Kelvin connection is made by software to obtain both accurate and stable measurement. The experimental data show that this Kelvin method is accurate and it is applicable to evaluate the accuracy of the conventional Kelvin method using the hardware feedback loop.

引用

页码：86 / +

页数：2