Czochralski growth and scintillation properties of Bi4Si3O12 (BSO) single crystal

被引：40

作者：

Hua, Jiang ^{[1
]}

Kim, H. J. ^{[1
]}

Rooh, Gul ^{[2
]}

Park, H. ^{[1
]}

Kim, Sunghwan ^{[3
]}

Cheon, JongKyu ^{[4
]}

机构：

[1] Kyungpook Natl Univ, Dept Phys, Taegu 702701, South Korea

[2] Abdul Wali Khan Univ, Dept Phys, Mardan 23200, Pakistan

[3] Cheongju Univ, Dept Radiol Technol, Cheongju 360764, South Korea

[4] Sorabol Coll, Radiat Dept, Gyeongju 780711, South Korea

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2011年 / 648卷 / 01期

关键词：

BSO; Crystal scintillator; Energy resolution; Czochralski; Luminescence; BISMUTH SILICATE BI4SI3O12;

D O I：

10.1016/j.nima.2011.05.043

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have successfully grown crack free BSO (Bi4Si3O12) single crystal using Czochralski pulling technique. A detailed description of the crystal growth procedure and the solutions of the difficulties during the growth process are presented. Results of X-ray diffraction (XRD) showed a single phase of the grown crystal. Photoluminescence and X-rays induced emission spectrum showed a broad emission band in the wavelength range from 350 to 650 nm. The energy resolution for 662 keV gamma rays is measured to be 22% (FWHM) at room temperature. We measured a light output of 1400 photons/MeV for absorbed gamma-ray energy. The decay time spectrum contained three components of 2.2 ns (2%), 78.4 ns (42%) and 125.6 ns (56%) at room temperature. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：73 / 76

页数：4

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