Czochralski growth and scintillation properties of Bi4Si3O12 (BSO) single crystal

被引:40
作者
Hua, Jiang [1 ]
Kim, H. J. [1 ]
Rooh, Gul [2 ]
Park, H. [1 ]
Kim, Sunghwan [3 ]
Cheon, JongKyu [4 ]
机构
[1] Kyungpook Natl Univ, Dept Phys, Taegu 702701, South Korea
[2] Abdul Wali Khan Univ, Dept Phys, Mardan 23200, Pakistan
[3] Cheongju Univ, Dept Radiol Technol, Cheongju 360764, South Korea
[4] Sorabol Coll, Radiat Dept, Gyeongju 780711, South Korea
关键词
BSO; Crystal scintillator; Energy resolution; Czochralski; Luminescence; BISMUTH SILICATE BI4SI3O12;
D O I
10.1016/j.nima.2011.05.043
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
We have successfully grown crack free BSO (Bi4Si3O12) single crystal using Czochralski pulling technique. A detailed description of the crystal growth procedure and the solutions of the difficulties during the growth process are presented. Results of X-ray diffraction (XRD) showed a single phase of the grown crystal. Photoluminescence and X-rays induced emission spectrum showed a broad emission band in the wavelength range from 350 to 650 nm. The energy resolution for 662 keV gamma rays is measured to be 22% (FWHM) at room temperature. We measured a light output of 1400 photons/MeV for absorbed gamma-ray energy. The decay time spectrum contained three components of 2.2 ns (2%), 78.4 ns (42%) and 125.6 ns (56%) at room temperature. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:73 / 76
页数:4
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