Optical properties of highly n-doped germanium obtained by in situ doping and laser annealing

被引：27

作者：

Frigerio, J. ^{[1
]}

Ballabio, A. ^{[1
]}

Gallacher, K. ^{[2
]}

Gilberti, V. ^{[3
]}

Baldassarre, L. ^{[3
]}

Millar, R. ^{[2
]}

Milazzo, R. ^{[4
,5
]}

Maiolo, L. ^{[6
]}

Minotti, A. ^{[6
]}

Bottegoni, F. ^{[7
]}

Biagioni, P. ^{[7
]}

Paul, D. ^{[2
]}

Ortolani, M. ^{[3
]}

Pecora, A. ^{[6
]}

Napolitani, E. ^{[4
,5
]}

Isella, G. ^{[1
]}

机构：

[1] Politecn Milan, L NESS, Dipartimento Fis, Polo Como, Via Anzani 42, I-22100 Como, Italy

[2] Univ Glasgow, Sch Engn, Rankine Bldg,Oakfield Ave, Glasgow G12 8LT, Lanark, Scotland

[3] Sapienza Univ Roma, Dipartimento Fis, Piazzale Aldo Moro 5, I-00185 Rome, Italy

[4] Univ Padua, Dipartimento Fis & Astron, Via Marzolo 8, I-35131 Padua, Italy

[5] CNR IMM Matis, Via Marzolo 8, I-35131 Padua, Italy

[6] CNR IMM, Via Fosso del Cavaliere 100, I-00133 Rome, Italy

[7] Politecn Milan, Dipartimento Fis, Piazza Leonardo da Vinci 32, I-20133 Milan, Italy

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2017年 / 50卷 / 46期

关键词：

germanium; doping; laser annealing; mid infrared; plasmonics; silicon photonic; SILICON;

D O I：

10.1088/1361-6463/aa8eca

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High n-type doping in germanium is essential for many electronic and optoelectronic applications especially for high performance Ohmic contacts, lasing and mid-infrared plasmonics. We report on the combination of in situ doping and excimer laser annealing to improve the activation of phosphorous in germanium. An activated n-doping concentration of 8.8 x 10(19) cm(-3) has been achieved starting from an incorporated phosphorous concentration of 1.1 x 10(20) cm(-3). Infrared reflectivity data fitted with a multi-layer Drude model indicate good uniformity over a 350 nm thick layer. Photoluminescence demonstrates clear bandgap narrowing and an increased ratio of direct to indirect bandgap emission confirming the high doping densities achieved.

引用

页数：7

共 39 条

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