Fabrication and characteristics of permeable-base organic transistors based on co-evaporated pentacene:Al base

被引：14
作者：
Zhao, Kai [1 ,2 ]
Deng, Jiachun [1 ,2 ]
Wu, Xiaoming [1 ,2 ]
Cheng, Xiaoman [1 ,2 ]
Wei, Jun [1 ,2 ,3 ]
Yin, Shougen [1 ,2 ]
机构：
[1] Tianjin Univ Technol, Key Lab Display Mat & Photoelect Devices, Minist Educ, Inst Mat Phys, Tianjin 300384, Peoples R China
[2] Tianjin Key Lab Photoelect Mat & Devices, Tianjin 300384, Peoples R China
[3] Singapore Inst Mfg Technol, Singapore, Singapore
来源：
ORGANIC ELECTRONICS | 2011年 / 12卷 / 06期
关键词：
Permeable-base; Organic transistor; Co-evaporation; Pentacene:Al base; HYBRID TRANSISTORS; METAL-BASE; ARCHITECTURE; GAIN;
D O I：
10.1016/j.orgel.2011.03.028
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this letter, fabrication and characteristics of a p-type permeable-base organic transistor are reported. A hole-type organic semiconductor pentacene is used as emitter and collector. The permeable pentacene:Al base is formed by co-evaporating pentacene and Al in vacuum. The device performance has shown to depend on the evaporation rate of pentacene in the pentacene: Al co-evaporation, where the evaporation rate of Al is controlled at 1 nm/s. Controlling the evaporation rate of pentacene at 0.1 nm/s in the pentacene: Al co-evaporation, the device shows the optimal common-base current gain of near 1 and common-emitter current gain of similar to 137. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：1003 / 1009
页数：7
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