All-Oxide-Based Highly Transparent Photonic Synapse for Neuromorphic Computing

被引:216
作者
Kumar, Mohit [1 ,2 ]
Abbas, Sohail [1 ,2 ]
Kim, Joondong [1 ,2 ]
机构
[1] Incheon Natl Univ, MCIFE, Dept Elect Engn, 119 Acad Rd Yeonsu, Incheon 22012, South Korea
[2] Incheon Natl Univ, MCIFE, PEDAL, 119 Acad Rd Yeonsu, Incheon 22012, South Korea
基金
新加坡国家研究基金会;
关键词
photonic synapse; transparent; all-oxide; charge trapping/detrapping; photoresponse; PHOTODETECTOR; MEMRISTOR; EMISSION; VOLTAGE; DEVICE;
D O I
10.1021/acsami.8b10870
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The neuromorphic system processes enormous information even with very low energy consumption, which practically can be achieved with photonic artificial synapse. Herein, a photonic artificial synapse is demonstrated based on an all-oxide highly transparent device. The device consists of conformally grown In2O3/ZnO thin films on a fluorine-doped tin oxide/glass substrate. The device showed a loop opening in current-voltage characteristics, which was attributed to charge trapping/detrapping. Ultraviolet illumination induced versatile features such as short-term/long-term plasticity and paired pulse facilitation were truly confirmed. Further, photonic potentiation and electrical habituation were implemented. This study paves the way to develop a device in which current can be modulated under the action of optical stimuli, serving as a fundamental step toward the realization of low-cost synaptic behavior.
引用
收藏
页码:34370 / 34376
页数:7
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