Application of dopant segregation to metal-germanium-metal photodetectors and its dark current suppression mechanism

被引：15

作者：

Zang, H. ^{[1
,2
]}

Lee, S. J. ^{[1
]}

Loh, W. Y. ^{[2
]}

Wang, J. ^{[2
]}

Yu, M. B. ^{[2
]}

Lo, G. Q. ^{[2
]}

Kwong, D. L. ^{[2
]}

Cho, B. J. ^{[1
]}

机构：

[1] Natl Univ Singapore, ECE Dept, Silicon Nano Devices Lab, Singapore 117576, Singapore

[2] Inst Microelect, ASTAR, Singapore 117685, Singapore

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 05期

关键词：

D O I：

10.1063/1.2841061

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the mechanism of dopant-segregation (DS) technique as applied in metal-germanium-metal photodetectors (MGM-PDs) for dark current suppression. Photodetectors with various dopant-segregation strategies were designed, fabricated, and characterized. Results show that asymmetric MGM-PD, with n- and p-type dopants segregated separately in two NiGe electrodes, is the optimized scheme in terms of dark current and responsivity. It shows a dark current of 10(-6) A at -1 V, which is two to three orders of magnitude lower than that of MGM-PD without DS. n-type dopant (As) segregation in NiGe barrier increases the hole Schottky barrier height to 0.5 eV and, thus, plays a crucial role in dark current suppression. (C) 2008 American Institute of Physics.

引用

页数：3

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