Ultimate photovoltage in perovskite oxide heterostructures with critical film thickness

被引：29

作者：

Wang, Cong ^{[1
]}

Jin, Kui-juan ^{[1
]}

Zhao, Rui-qiang ^{[1
]}

Lu, Hui-bin ^{[1
]}

Guo, Hai-zhong ^{[1
]}

Ge, Chen ^{[1
]}

He, Meng ^{[1
]}

Wang, Can ^{[1
]}

Yang, Guo-zhen ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 18期

基金：

中国国家自然科学基金;

关键词：

ENHANCEMENT;

D O I：

10.1063/1.3586250

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

One order larger photovoltage is obtained with critical thicknesses of La0.9Sr0.1MnO3 films in both kinds of heterostructures of La0.9Sr0.1MnO3/SrTiO3 (0.8 wt % Nb-doped) and La0.9Sr0.1MnO3/Si fabricated at various oxygen pressures. Our self-consistent calculation reveals that the critical thickness of the La0.9Sr0.1MnO3 film with the ultimate value of photovoltage is just the thickness of the depletion layer of La0.9Sr0.1MnO3 in both heterojunctions, respectively. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3586250]

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页数：3

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