Graphitization of diamond stimulated by electron-hole recombination

被引:13
|
作者
Strekalov, VN [1 ]
机构
[1] Moscow State Univ Technol STANKIN, Moscow 101472, Russia
来源
关键词
D O I
10.1007/s00339-003-2362-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A laser field photon whose energy exceeds a crystal's electronic band gap generates electron-hole pairs. Non-radiative recombination of such pairs in diamond may assist transiting the carbon atoms into the graphite phase, that is, graphitization of diamond. A theoretical problem of finding the rate of this type of laser-driven graphitization process is posed. One and three dimensional geometries of surface graphitization are studied. Graphitization rates are evaluated, as well as the thickness of the formed graphite layers, as functions of temperature.
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页码:1061 / 1066
页数:6
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