Process Dependence of Proton-Induced Degradation in GaN HEMTs

被引：92

作者：

Roy, Tania ^{[1
]}

Zhang, En Xia ^{[1
]}

Puzyrev, Yevgeniy S. ^{[2
]}

Fleetwood, Daniel M. ^{[1
]}

Schrimpf, Ronald D. ^{[1
]}

Choi, Bo K. ^{[1
]}

Hmelo, Anthony B. ^{[2
]}

Pantelides, Sokrates T. ^{[2
]}

机构：

[1] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37235 USA

[2] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2010年 / 57卷 / 06期

基金：

美国国家科学基金会;

关键词：

1/f noise; AlGaN/GaN; degradation; HEMT; proton; LOW-FREQUENCY NOISE; POWER PERFORMANCE; 1/F NOISE; TRANSISTOR;

D O I：

10.1109/TNS.2010.2073720

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The 1.8-MeV proton radiation responses are compared for AlGaN/GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions. The NH3-rich devices are more susceptible to proton irradiation than the Ga-rich and N-rich devices. The 1/f noise of the devices increases with increasing fluence. Density functional theory calculations show that N vacancies and Ga-N divacancies lead to enhanced noise in these devices.

引用

页码：3060 / 3065

页数：6

共 21 条

[1] Gate-voltage dependence of low-frequency noise in GaN/AlGaN heterostructure field-effect transistors
Balandin, A
[J]. ELECTRONICS LETTERS, 2000, 36 (10) : 912 - 913
[2] Annealing behavior of a proton irradiated AlxGa1-xN/GaN high electron mobility transistor grown by MBE
Cai, SJ
Tang, YS
Li, R
Wei, YY
Wong, L
Chen, YL
Wang, KL
Chen, M
Zhao, YF
Schrimpf, RD
Keay, JC
Galloway, KF
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (02) : 304 - 307
[3] Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors
Corrion, A. L.
Poblenz, C.
Wu, F.
Speck, J. S.
[J]. JOURNAL OF APPLIED PHYSICS, 2008, 103 (09)
[4] 1/F NOISE AND RADIATION EFFECTS IN MOS DEVICES
FLEETWOOD, DM
MEISENHEIMER, TL
SCHOFIELD, JH
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (11) : 1953 - 1964
[5] EXPERIMENTAL STUDIES ON 1-F NOISE
HOOGE, FN
KLEINPENNING, TGM
VANDAMME, LKJ
[J]. REPORTS ON PROGRESS IN PHYSICS, 1981, 44 (05) : 479 - 532
[6] Hu X., 2003, IEEE T NUCL SCI, V50, P1801
[7] Electrostatic Mechanisms Responsible for Device Degradation in Proton Irradiated AlGaN/AIN/GaN HEMTs
Kalavagunta, A.
Touboul, A.
Shen, L.
Schrimpf, R. D.
Reed, R. A.
Fleetwood, D. M.
Jain, R. K.
Mishra, U. K.
[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2008, 55 (04) : 2106 - 2112
[8] LOW-FREQUENCY NOISE IN MODERN BIPOLAR-TRANSISTORS - IMPACT OF INTRINSIC TRANSISTOR AND PARASITIC SERIES RESISTANCES
KLEINPENNING, TGM
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (11) : 1981 - 1991
[9] X- and Ka-band power performance of AlGaN/GaN HEMTs grown by ammonia-MBE
Pei, Y.
Poblenz, C.
Corrion, A. L.
Chu, R.
Shen, L.
Speck, J. S.
Mishra, U. K.
[J]. ELECTRONICS LETTERS, 2008, 44 (09) : 598 - +
[10] 1/F NOISE IN MODFETS AT LOW DRAIN BIAS
PERANSIN, JM
VIGNAUD, P
RIGAUD, D
VANDAMME, LKJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (10) : 2250 - 2253

← 1 2 3 →