Process Dependence of Proton-Induced Degradation in GaN HEMTs

被引：94

作者：

Roy, Tania ^{[1
]}

Zhang, En Xia ^{[1
]}

Puzyrev, Yevgeniy S. ^{[2
]}

Fleetwood, Daniel M. ^{[1
]}

Schrimpf, Ronald D. ^{[1
]}

Choi, Bo K. ^{[1
]}

Hmelo, Anthony B. ^{[2
]}

Pantelides, Sokrates T. ^{[2
]}

机构：

[1] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37235 USA

[2] Vanderbilt Univ, Dept Phys & Astron, Nashville, TN 37235 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2010年 / 57卷 / 06期

基金：

美国国家科学基金会;

关键词：

1/f noise; AlGaN/GaN; degradation; HEMT; proton; LOW-FREQUENCY NOISE; POWER PERFORMANCE; 1/F NOISE; TRANSISTOR;

D O I：

10.1109/TNS.2010.2073720

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The 1.8-MeV proton radiation responses are compared for AlGaN/GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions. The NH3-rich devices are more susceptible to proton irradiation than the Ga-rich and N-rich devices. The 1/f noise of the devices increases with increasing fluence. Density functional theory calculations show that N vacancies and Ga-N divacancies lead to enhanced noise in these devices.

引用

页码：3060 / 3065

页数：6

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