An accelerator is an indispensable organic additive for the bottom-up filling of copper electroplating in nano-or micro-scale features. However, its effective concentration is too low to be easily determined and controlled. Herein, a new electrochemical analysis method based on self-assembly monolayers of thiol molecules on a gold electrode was developed to accurately determine a trace amount of accelerator. The accelerator employed in copper plating solutions is bis-(3-sulfopropyl) disulfide (SPS), which is the most common accelerator for the filling of vias and trenches of interconnects. The SPS concentration in copper plating solutions ranged from 0.3 to 9.0 ppm. Following selective chemisorption of SPS onto the gold electrode, the SPS-modified gold electrode was transferred into a specific electrolyte composed of CuSO(4), H(2)SO(4), polyethylene glycol and chloride ions to run cyclic voltammetry (CV) for copper deposition and stripping. A specific peak current of copper reduction formed in the CV, and its peak area depended on the SPS concentration in the copper plating solution. A good linear calibration line was obtained by using this electrochemical analysis method, which can determine a trace amount of SPS in a concentration range of 0.3-1.0 ppm, which is a significant challenge for traditional instruments. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3560479] All rights reserved.
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IBM Corp, Thomas J Watson Res Ctr, Div Res, Yorktown Heights, NY 10598 USAIBM Corp, Thomas J Watson Res Ctr, Div Res, Yorktown Heights, NY 10598 USA
Andricacos, PC
Uzoh, C
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机构:IBM Corp, Thomas J Watson Res Ctr, Div Res, Yorktown Heights, NY 10598 USA
Uzoh, C
Dukovic, JO
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机构:IBM Corp, Thomas J Watson Res Ctr, Div Res, Yorktown Heights, NY 10598 USA
Dukovic, JO
Horkans, J
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Horkans, J
Deligianni, H
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Semicond Mfg Int Shanghai Corp, PuDong New Area, Shanghai 201203, Peoples R ChinaSemicond Mfg Int Shanghai Corp, PuDong New Area, Shanghai 201203, Peoples R China
D'Urzo, L
Wang, HH
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Wang, HH
Pa, A
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Zhi, C
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Semicond Mfg Int Shanghai Corp, PuDong New Area, Shanghai 201203, Peoples R ChinaSemicond Mfg Int Shanghai Corp, PuDong New Area, Shanghai 201203, Peoples R China
机构:
IBM Corp, Thomas J Watson Res Ctr, Div Res, Yorktown Heights, NY 10598 USAIBM Corp, Thomas J Watson Res Ctr, Div Res, Yorktown Heights, NY 10598 USA
Andricacos, PC
Uzoh, C
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机构:IBM Corp, Thomas J Watson Res Ctr, Div Res, Yorktown Heights, NY 10598 USA
Uzoh, C
Dukovic, JO
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机构:IBM Corp, Thomas J Watson Res Ctr, Div Res, Yorktown Heights, NY 10598 USA
Dukovic, JO
Horkans, J
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机构:IBM Corp, Thomas J Watson Res Ctr, Div Res, Yorktown Heights, NY 10598 USA
Horkans, J
Deligianni, H
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机构:IBM Corp, Thomas J Watson Res Ctr, Div Res, Yorktown Heights, NY 10598 USA
机构:
Semicond Mfg Int Shanghai Corp, PuDong New Area, Shanghai 201203, Peoples R ChinaSemicond Mfg Int Shanghai Corp, PuDong New Area, Shanghai 201203, Peoples R China
D'Urzo, L
Wang, HH
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Semicond Mfg Int Shanghai Corp, PuDong New Area, Shanghai 201203, Peoples R ChinaSemicond Mfg Int Shanghai Corp, PuDong New Area, Shanghai 201203, Peoples R China
Wang, HH
Pa, A
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Semicond Mfg Int Shanghai Corp, PuDong New Area, Shanghai 201203, Peoples R ChinaSemicond Mfg Int Shanghai Corp, PuDong New Area, Shanghai 201203, Peoples R China
Pa, A
Zhi, C
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Semicond Mfg Int Shanghai Corp, PuDong New Area, Shanghai 201203, Peoples R ChinaSemicond Mfg Int Shanghai Corp, PuDong New Area, Shanghai 201203, Peoples R China