Characterization of short-wavelength-selective a-Si:H MSM photoconductors for large-area digital-imaging applications

被引：18

作者：

Taghibakhsh, Farhad ^{[1
]}

Khodami, Ida ^{[1
]}

Karim, Karim S. ^{[1
]}

机构：

[1] Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 01期

基金：

加拿大创新基金会; 加拿大自然科学与工程研究理事会;

关键词：

amorphous silicon (a-Si); metal-semiconductor-metal (MSM) devices; photoconducting devices; photodetectors;

D O I：

10.1109/TED.2007.911094

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photoconductor-type photodetectors are attractive as sensors due to their compatibility with thin-film-transistor (TFT) fabrication processes. Since they exhibit photogain, photoconductor detectors have better or comparable responsivity and quantum efficiency (QE) compared to p-i-n photodiodes. In this paper, the operation of metal-semiconductor-metal photoconductor-based photodetectors using aluminum electrodes and thin hydrogenated amorphous-silicon (a-Si) films is investigated. The experimental results of photocurrent measurements, as well as the responsivity and QE for different a-Si film thicknesses, bias voltages, and electrode gaps, are presented. Integration with TFT fabrication and its application in large-area digital imaging are discussed.

引用

页码：337 / 342

页数：6

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