Conditions for femtosecond laser melting of silicon

被引:72
作者
Korfiatis, D. P. [1 ]
Thoma, K-A Th
Vardaxoglou, J. C.
机构
[1] Univ Patras, Dept Phys, GR-26110 Patras, Greece
[2] Univ Loughborough, Dept Elect & Elect Engn, Loughborough LE11 3TU, Leics, England
关键词
D O I
10.1088/0022-3727/40/21/047
中图分类号
O59 [应用物理学];
学科分类号
摘要
Conditions defining melting fluence thresholds for silicon under pulsed laser irradiation are introduced in this paper. The melting conditions include both thermal and non-thermal contributions. Furthermore, a definition of the non-thermal melting threshold is given as the laser fluence above which the non-thermal contribution dominates over the thermal one and a short-lived non-thermal liquid phase appears in the femtosecond time scale. Numerical values of thresholds obtained through a two-temperature model are in good agreement with experimental data. The dependence of fluence thresholds on both wavelength and pulse width is explored and discussed in detail.
引用
收藏
页码:6803 / 6808
页数:6
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