Conditions for femtosecond laser melting of silicon

被引:72
作者
Korfiatis, D. P. [1 ]
Thoma, K-A Th
Vardaxoglou, J. C.
机构
[1] Univ Patras, Dept Phys, GR-26110 Patras, Greece
[2] Univ Loughborough, Dept Elect & Elect Engn, Loughborough LE11 3TU, Leics, England
关键词
D O I
10.1088/0022-3727/40/21/047
中图分类号
O59 [应用物理学];
学科分类号
摘要
Conditions defining melting fluence thresholds for silicon under pulsed laser irradiation are introduced in this paper. The melting conditions include both thermal and non-thermal contributions. Furthermore, a definition of the non-thermal melting threshold is given as the laser fluence above which the non-thermal contribution dominates over the thermal one and a short-lived non-thermal liquid phase appears in the femtosecond time scale. Numerical values of thresholds obtained through a two-temperature model are in good agreement with experimental data. The dependence of fluence thresholds on both wavelength and pulse width is explored and discussed in detail.
引用
收藏
页码:6803 / 6808
页数:6
相关论文
共 44 条
[1]   Investigation of photoionization processes in ultrashort laser induced damage in optical materials [J].
Azzouz, IM .
JOURNAL OF PHYSICS B-ATOMIC MOLECULAR AND OPTICAL PHYSICS, 2004, 37 (16) :3259-3264
[2]   Modifying single-crystalline silicon by femtosecond laser pulses: an analysis by micro Raman spectroscopy, scanning laser microscopy and atomic force microscopy [J].
Bonse, J ;
Brzezinka, KW ;
Meixner, AJ .
APPLIED SURFACE SCIENCE, 2004, 221 (1-4) :215-230
[3]   Femtosecond laser ablation of silicon-modification thresholds and morphology [J].
Bonse, J ;
Baudach, S ;
Krüger, J ;
Kautek, W ;
Lenzner, M .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2002, 74 (01) :19-25
[4]   Transmission and scanning electron microscopy studies of single femtosecond-laser-pulse ablation of silicon [J].
Borowiec, A ;
Mackenzie, M ;
Weatherly, GC ;
Haugen, HK .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2003, 76 (02) :201-207
[5]   Electronic transport and consequences for material removal in ultrafast pulsed laser ablation of materials [J].
Bulgakova, NM ;
Stoian, R ;
Rosenfeld, A ;
Hertel, IV ;
Campbell, EEB .
PHYSICAL REVIEW B, 2004, 69 (05)
[6]   Ultrafast x-ray measurement of laser heating in semiconductors:: Parameters determining the melting threshold -: art. no. 193306 [J].
Cavalleri, A ;
Siders, CW ;
Rose-Petruck, C ;
Jimenez, R ;
Tóth, C ;
Squier, JA ;
Barty, CPJ ;
Wilson, KR ;
Sokolowski-Tinten, K ;
von Hoegen, MH ;
von der Linde, D .
PHYSICAL REVIEW B, 2001, 63 (19)
[7]   Femtosecond melting and ablation of semiconductors studied with time of flight mass spectroscopy [J].
Cavalleri, A ;
Sokolowski-Tinten, K ;
Bialkowski, J ;
Schreiner, M ;
von der Linde, D .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (06) :3301-3309
[8]   Numerical investigation of ultrashort laser damage in semiconductors [J].
Chen, JK ;
Tzou, DY ;
Beraun, JE .
INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER, 2005, 48 (3-4) :501-509
[9]   Observation of femtosecond laser-induced ablation in crystalline silicon [J].
Choi, TY ;
Grigoropoulos, CP .
JOURNAL OF HEAT TRANSFER-TRANSACTIONS OF THE ASME, 2004, 126 (05) :723-726
[10]  
DOUMANIS ET, 2007, UNPUB IEEE T ANT PRO