Transforming a surface state of a topological insulator by a Bi capping layer

被引：11

作者：

Yeom, Han Woong ^{[1
,2
]}

Kim, Sung Hwan ^{[1
,2
]}

Shin, Woo Jong ^{[1
,2
]}

Jin, Kyung-Hwan ^{[2
]}

Park, Joonbum ^{[2
]}

Kim, Tae-Hwan ^{[1
,2
]}

Kim, Jun Sung ^{[2
]}

Ishikawa, Hirotaka ^{[3
]}

Sakamoto, Kazuyuki ^{[3
]}

Jhi, Seung-Hoon ^{[2
]}

机构：

[1] Inst for Basic Sci Korea, Ctr Artificial Low Dimens Elect Syst, Pohang 790784, South Korea

[2] Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, South Korea

[3] Chiba Univ, Dept Nanomat Sci, Chiba 2638522, Japan

来源：

PHYSICAL REVIEW B | 2014年 / 90卷 / 23期

关键词：

PHASE-TRANSITION; DIRAC CONE;

D O I：

10.1103/PhysRevB.90.235401

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We introduce a distinct approach to engineer a topologically protected surface state of a topological insulator. By covering the surface of a topological insulator, Bi2Te2Se, with a Bi monolayer film, the original surface state is completely removed and three new spin helical surface states, originating from the Bi film, emerge with different dispersion and spin polarization, through a strong electron hybridization. These new states play the role of topological surface states keeping the bulk topological nature intact. This mechanism provides a way to create various different types of topologically protected electron channels on top of a single topological insulator, possibly with tailored properties for various applications.

引用

页数：5

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