Conduction-band effective mass and bandgap of ZnSnN2 earth-abundant solar absorber

被引:34
作者
Cao, Xiang [1 ]
Kawamura, Fumio [2 ]
Ninomiya, Yoshihiko [1 ]
Taniguchi, Takashi [2 ]
Yamada, Naoomi [1 ]
机构
[1] Chubu Univ, Dept Appl Chem, Kasugai, Aichi 4878501, Japan
[2] NIMS, Tsukuba, Ibaraki 3050044, Japan
来源
SCIENTIFIC REPORTS | 2017年 / 7卷
基金
日本学术振兴会;
关键词
ELECTRON EFFECTIVE-MASS; OPTICAL-CONSTANTS; GAAS; GAN; RF; SI;
D O I
10.1038/s41598-017-14850-7
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Pseudo III-V nitride ZnSnN2 is an earth-abundant semiconductor with a high optical absorption coefficient in the solar spectrum. Its bandgap can be tuned by controlling the cation sublattice disorder. Thus, it is a potential candidate for photovoltaic absorber materials. However, its important basic properties such as the intrinsic bandgap and effective mass have not yet been quantitatively determined. This paper presents a detailed optical absorption analysis of disordered ZnSnN2 degenerately doped with oxygen (ZnSnN2-xOx) in the ultraviolet to infrared region to determine the conduction-band effective mass (m(c)*) and intrinsic bandgap (E-g). ZnSnN2-xOx epilayers are n-type degenerate semiconductors, which exhibit clear free-electron absorption in the infrared region. By analysing the free-electron absorption using the Drude model, m(c)* was determined to be (0.37 +/- 0.05) m(0) (m(0) denotes the free electron mass). The fundamental absorption edge in the visible to ultraviolet region shows a blue shift with increasing electron density. The analysis of the blue shift in the framework of the Burstein-Moss effect gives the E-g value of 0.94 +/- 0.02 eV. We believe that the findings of this study will provide important information to establish this material as a photovoltaic absorber.
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页数:10
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