ZnO:Co diluted magnetic semiconductor or hybrid nanostructure for spintronics?

被引：14
作者：
Golmar, F. [2 ]
Villafuerte, M. [1 ]
Mudarra Navarro, A. [3 ]
Rodriguez Torres, C. E. [3 ]
Barzola-Quiquia, J. [4 ]
Esquinazi, P. [4 ]
Heluani, S. P. [1 ]
机构：
[1] Univ Nacl Tucuman, Lab Fis Solido, Dept Fis, Fac Ciencias Exactas & Tecnol,CONICET, San Miguel De Tucuman, Argentina
[2] Univ Buenos Aires, Fac Ingn, Dept Fis, Lab Ablac Laser, Buenos Aires, DF, Argentina
[3] Univ Nacl La Plata, Dept Fis IFLP, Fac Ciencias Exactas, La Plata, Buenos Aires, Argentina
[4] Univ Leipzig, Div Superconduct & Magnetism, Inst Expt Phys 2, Leipzig, Germany
来源：
JOURNAL OF MATERIALS SCIENCE | 2010年 / 45卷 / 22期
关键词：
FERROMAGNETISM; EXCHANGE;
D O I：
10.1007/s10853-010-4710-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have studied the influence of intrinsic and extrinsic defects in the magnetic and electrical transport properties of Co-doped ZnO thin films. X-ray absorption measurements show that Co substitute Zn in the ZnO structure and it is in the 2+ oxidation state. Magnetization (M) measurements show that doped samples are mainly paramagnetic. From M vs. H loops measured at 5 K we found that the values of the orbital L and spin S numbers are between 1 and 1.3 for L and S = 3/2, in agreement with the representative values for isolated Co 2+. The obtained negative values of the Curie-Weiss temperatures indicate the existence of antiferromagnetic interactions between transition metal atoms.
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收藏
页码：6174 / 6178
页数：5
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