InGaAs/InAlAs/AlAs heterostructure barrier varactors for harmonic multiplication

被引：16

作者：

Melique, X ^{[1
]}

Carbonell, J ^{[1
]}

Havart, R ^{[1
]}

Mounaix, P ^{[1
]}

Vanbesien, O ^{[1
]}

Lippens, D ^{[1
]}

机构：

[1] Univ Sci & Technol Lille, UMR 9929, Int Elect & Microelect Nord, F-59652 Villeneuve, France

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1998年 / 8卷 / 07期

关键词：

harmonic multiplier; heterostructure; varactor;

D O I：

10.1109/75.701383

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we report on the radio frequency (RF) characterization up to 110 GHz of probeable high-performance heterostructure barrier varactors fabricated from InP-based strained epilayers, By making use of a dual step-like barrier scheme, the voltage handling is as high as 12 V whereas the capacitance ratio at 85 GHz achieves 5:1 for a zero-bias capacitance of 1 fF/mu m(2) without deviation in the frequency band investigated. Good agreement between calculated and measured scattering parameters is found on the basis of electromagnetic simulation of diode embedding.

引用

页码：254 / 256

页数：3

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