Highly reliable oxide-semiconductor TFT for AMOLED displays

被引：24

作者：

Arai, Toshiaki ^{[1
]}

Morosawa, Narihiro ^{[1
]}

Tokunaga, Kazuhiko ^{[1
]}

Terai, Yasuhiro ^{[1
]}

Fukumoto, Eri ^{[1
]}

Fujimori, Takashige ^{[1
]}

Sasaoka, Tatsuya ^{[1
]}

机构：

[1] Sony Corp, Core Device Dev Grp, Atsugi, Kanagawa 2430014, Japan

来源：

JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY | 2011年 / 19卷 / 02期

关键词：

Oxide-semiconductor TFT; reliability; stability; stress; contact material; passivation; Al2O3; dc sputter; TFT structure; OLED;

D O I：

10.1889/JSID19.2.205

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The stability and reliability of oxide-semiconductor TFTs were investigated. The contact material to the oxide semiconductor affected the thermal stability of the TFT, and a molybdenum-contact source/drain showed good stability. And the passivating film and TFT structure affected the stability against bias stress and humidity stress, and dc-sputtered Al2O3 passivation and fully covered channel structure with an etching stopper or source/drain showed good reliability. Moreover, high photostability was confirmed by the bias-enhanced photo-irradiation stress test. An 11.7-in.-diagonal qHD AMOLED display was demonstrated to provide an applicable solution for a large-sized OLED and an ultra-high-definition LCD-TV mass production.

引用

页码：205 / 211

页数：7

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