A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis

被引：74
作者：
Ceccarelli, L. [1 ]
Reigosa, P. D. [1 ]
Iannuzzo, F. [1 ]
Blaabjerg, F. [1 ]
机构：
[1] Aalborg Univ, Dept Energy Technol, Ctr Reliable Power Elect, Pontoppidanstr 101, DK-9220 Aalborg, Denmark
来源：
MICROELECTRONICS RELIABILITY | 2017年 / 76卷
关键词：
SiC MOSFETs; Short-circuit; Failure mechanisms; Short-circuit ruggedness;
D O I：
10.1016/j.microrel.2017.06.093
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The aim of this paper is to provide an extensive overview about the state-of-art commercially available SiC power MOSFET, focusing on their short-circuit ruggedness. A detailed literature investigation has been carried out, in order to collect and understand the latest research contribution within this topic and create a survey of the present scenario of SiC MOSFETs reliability evaluation and failure mode analysis, pointing out the evolution and improvements as well as the future challenges in this promising-device technology. (C) 2017 Elsevier Ltd. All rights reserved.
引用
收藏
页码：272 / 276
页数：5
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