A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis

被引：81
作者：
Ceccarelli, L. [1 ]
Reigosa, P. D. [1 ]
Iannuzzo, F. [1 ]
Blaabjerg, F. [1 ]
机构：
[1] Aalborg Univ, Dept Energy Technol, Ctr Reliable Power Elect, Pontoppidanstr 101, DK-9220 Aalborg, Denmark
来源：
MICROELECTRONICS RELIABILITY | 2017年 / 76卷
关键词：
SiC MOSFETs; Short-circuit; Failure mechanisms; Short-circuit ruggedness;
D O I：
10.1016/j.microrel.2017.06.093
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The aim of this paper is to provide an extensive overview about the state-of-art commercially available SiC power MOSFET, focusing on their short-circuit ruggedness. A detailed literature investigation has been carried out, in order to collect and understand the latest research contribution within this topic and create a survey of the present scenario of SiC MOSFETs reliability evaluation and failure mode analysis, pointing out the evolution and improvements as well as the future challenges in this promising-device technology. (C) 2017 Elsevier Ltd. All rights reserved.
引用
收藏
页码：272 / 276
页数：5
相关论文
共 22 条
[1]  
[Anonymous], 2015, P 10 ANN CYBER INFOR
[2]  
[Anonymous], P EL DEV M IEDM 2016
[3]  
Awwad Abdullah Eial, 2015, 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe), P1, DOI 10.1109/EPE.2015.7311701
[4]  
Baliga BJ, 2005, SILICON RF POWER MOSFETS, P1, DOI 10.1142/9789812569325
[5]   Analysis of PowerMOSFET chips failed in thermal instability [J].
Castellazzi, A ;
Schwarzbauer, H ;
Schmitt-Landsledel, D .
MICROELECTRONICS RELIABILITY, 2004, 44 (9-11) :1419-1424
[6]   SiC power MOSFETs performance, robustness and technology maturity [J].
Castellazzi, A. ;
Fayyaz, A. ;
Romano, G. ;
Yang, L. ;
Riccio, M. ;
Irace, A. .
MICROELECTRONICS RELIABILITY, 2016, 58 :164-176
[7]   Hot-spot measurements and analysis of electro-thermal effects in low-voltage power-MOSFET's [J].
Castellazzi, A ;
Kartal, V ;
Kraus, R ;
Seliger, N ;
Honsberg-Riedl, M ;
Schmitt-Landsiedel, D .
MICROELECTRONICS RELIABILITY, 2003, 43 (9-11) :1877-1882
[8]   Thermal instability effects in SiC Power MOSFETs [J].
Castellazzi, Alberto ;
Funaki, Tsuyoshi ;
Kimoto, Tsunenobu ;
Hikihara, Takashi .
MICROELECTRONICS RELIABILITY, 2012, 52 (9-10) :2414-2419
[9]   Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs [J].
Chen, Cheng ;
Labrousse, Denis ;
Lefebvre, Stephane ;
Petit, Mickael ;
Buttay, Cyril ;
Morel, Herve .
MICROELECTRONICS RELIABILITY, 2015, 55 (9-10) :1708-1713
[10]  
Duong TH, 2015, PROC INT SYMP POWER, P217, DOI 10.1109/ISPSD.2015.7123428
123