Electrically induced and detected Neel vector reversal in a collinear antiferromagnet

被引:94
作者
Godinho, J. [1 ,2 ]
Reichlova, H. [1 ,3 ]
Kriegner, D. [1 ,4 ]
Novak, V. [1 ]
Olejnik, K. [1 ]
Kaspar, Z. [1 ]
Soban, Z. [1 ]
Wadley, P. [5 ]
Campion, R. P. [5 ]
Otxoa, R. M. [6 ,7 ]
Roy, P. E. [6 ]
Zelezny, J. [1 ]
Jungwirth, T. [1 ,5 ]
Wunderlich, J. [1 ,6 ]
机构
[1] Czech Acad Sci, Inst Phys, Cukrovarnicka 10, Prague 16000 6, Czech Republic
[2] Charles Univ Prague, Fac Math & Phys, Ke Karlovu 3, Prague 12116 2, Czech Republic
[3] Tech Univ Dresden, Inst Festkorper & Mat Phys, D-01062 Dresden, Germany
[4] Max Planck Inst Chem Phys Solids, D-01187 Dresden, Germany
[5] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
[6] Hitachi Europe LTD, Hitachi Cambridge Lab, JJ Thomson Ave, Cambridge CB3 0HE, England
[7] Donostia Int Phys Ctr, Paseo Manuel de Lardizabal 4, Donostia San Sebastian 20018, Spain
基金
英国工程与自然科学研究理事会;
关键词
ROOM-TEMPERATURE; NONCOLLINEAR ANTIFERROMAGNET; SPINTRONICS; TRANSPORT; MEMORY;
D O I
10.1038/s41467-018-07092-2
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Antiferromagnets are enriching spintronics research by many favorable properties that include insensitivity to magnetic fields, neuromorphic memory characteristics, and ultra-fast spin dynamics. Designing memory devices with electrical writing and reading is one of the central topics of antiferromagnetic spintronics. So far, such a combined functionality has been demonstrated via 90 degrees reorientations of the Neel vector generated by the current-induced spin orbit torque and sensed by the linear-response anisotropic magnetoresistance. Here we show that in the same antiferromagnetic CuMnAs films as used in these earlier experiments we can also control 180 degrees Neel vector reversals by switching the polarity of the writing current. Moreover, the two stable states with opposite Neel vector orientations in this collinear antiferromagnet can be electrically distinguished by measuring a second-order magnetoresistance effect. We discuss the general magnetic point group symmetries allowing for this electrical readout effect and its specific microscopic origin in CuMnAs.
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页数:8
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