Room temperature laser operation of strained InGaAs/GaAs QW structure monolithically grown by MOVCD on LE-PECVD Ge/Si virtual substrate

被引：25

作者：

Chriqui, Y ^{[1
]}

Saint-Girons, G

Bouchoule, S

Moison, JM

Isella, G

von Kaenel, H

Sagnes, I

机构：

[1] CNRS, UPR20, LPN, F-91460 Marcoussis, France

[2] Politecn Milan, INFM, I-22100 Como, Italy

[3] Politecn Milan, LNESS, Dipartimento Fis, I-22100 Como, Italy

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 23期

关键词：

D O I：

10.1049/el:20030926

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Th first successful realisation of MOVPE grown strained InGaAs/GaAs long-wavelength quantum well (QW) laser structures integrated on Si substrates via strained relaxed Ge/GeSi buffer layers is reported. Room temperature (RT) operation at an emission wavelength of 1.04 mum was obtained from broad area devices. Identical control laser diodes grown on bulk germanium substrates showed similar threshold current density, demonstrating the potential of Ge/Si-virtual substrate (VS) for monolithic integration of long-wavelength GaAs-based lasers on Si.

引用

页码：1658 / 1660

页数：3

共 6 条

[1] GAAS-BASED DIODE-LASERS ON SI WITH INCREASED LIFETIME OBTAINED BY USING STRAINED INGAAS ACTIVE LAYER [J].