Optical and electrical studies of as-prepared and annealed Se-Te-Bi thin films

被引：21

作者：

Suri, N. ^{[1
]}

Bindra, K. S. ^{[1
]}

Ahmad, M. ^{[1
]}

Kumar, J. ^{[1
]}

Thangaraj, R. ^{[1
]}

机构：

[1] Guru Nanak Dev Univ, Semicond Lab, Dept Appl Phys, Amritsar 143005, Punjab, India

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2008年 / 90卷 / 01期

关键词：

D O I：

10.1007/s00339-007-4242-z

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of thermal annealing on the electrical and optical properties of a thin film of Se-Te-Bi alloy has been studied. It has been found that the mechanism of optical absorption follows a non-direct transition. The optical band-gap decreases with an increase in the Bismuth concentration. The electrical conductivity of the as-deposited and annealed films has been found to be of Arrhenius type. The results are discussed on the basis of rearrangements of defects and disorders in the chalcogenide systems.

引用

页码：149 / 151

页数：3

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